AIT's original process was targeted at providing an interconnect structure with sub 50 micron track and gap capability.  The basic technology is now used with different photoresists that enable varying conductor thicknesses and resolutions to be achieved.  In all cases a number of finishes are available.  Many millions of these circuits have been delivered.
For the finest resolutions a thin resist is employed and features down to about 20 microns can be offered in copper 10 microns thick.  The picture right shows a section of a substrate with 30 micron features with a nickel and gold finish  
  In the most commonly employed technique the copper thickness is in the range 15 to 40 microns thick and the resolution is to about 75 microns track and gap.  The picture left shows a diode array circuit with about 100 micron features in copper 25 microns thick.  The finish is electroplated nickel and gold. 
This basic technology is limited to about 75 micron copper thickness and at this thickness the resolution is around 120 microns.  The picture right shows a medium power high power density circuit with 50 micron thick copper and a nickel and gold finish.   

In all cases the circuits can be finished in a tarnish resistant organic film, electroless silver, electroless tin or electroplated nickel and gold.  Photoimaged soldermask is also available.

The natural applications of this technology include microwave circuits where the accuracy of the feature reproduction and low dispersion are important, high density interconnect particularly when high pincount circuits are assembled by wire bonding and low power but high power density circuits where the low electrical track resistance and good thermal management characteristics are important